Deep Report: DRAM Storage Chip Research Framework – Technical Overview and Market Analysis

DRAM (Dynamic Random Access Memory) is a volatile memory technology that stores each bit in a cell consisting of a capacitor and a transistor, requiring periodic refresh to maintain data.

Compared with SRAM, DRAM offers higher density and lower cost but slower read/write speed, making it suitable for main memory in computers, smartphones, and servers, while SRAM is used for high‑speed caches.

The DRAM market is dominated by three major players—Samsung, SK Hynix, and Micron—whose combined market share rose from about 62% in 2005 to over 95% in 2018, with other manufacturers such as Nanya and HuaBang holding minor positions.

DRAM products are categorized into DDR, LPDDR, GDDR and HBM families; DDR4 and LPDDR4 are currently mainstream, and DDR5 is entering commercial use driven by the growth of cloud computing and big‑data workloads.

The report outlines an investment logic framework, analyzes supply‑demand cycles, and provides a detailed breakdown of DRAM’s technical paths, future technologies, and domestic Chinese projects, highlighting Hefei ChangXin as a key domestic hopeful.