Xiaomi Tech

Dec 12, 2025 · Fundamentals

Xiaomi’s GaN Low‑Voltage PA Paper Accepted at IEDM 2025

A paper co‑authored by Xiaomi’s mobile RF team, Nengxun High‑Energy Semiconductor and HKUST was selected for IEDM 2025, reporting the first integration of a silicon‑based GaN low‑voltage power‑amplifier MMIC into a handset with over 50% efficiency, marking a breakthrough for 6G‑era RF front‑ends.